elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Contact | Deutsch
Fontsize: [-] Text [+]

Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

Zhukavin, Roman and Tsyplenkov, Veniamin and Kovalesky, Konstantin and Shastin, Valery and Pavlov, Sergey and Böttger, Ute and Hübers, Heinz-Wilhelm and Riemann, Helge and Abrosimov, Nikolay and Nötzel, Natalia (2007) Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon. Applied Physics Letters, 90, 051101-1-051101-3. American Institute of Physics. DOI: 10.1063/1.2431568.

[img] PDF - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
136kB

Abstract

The effect of uniaxial stress on terahertz stimulated emission from phosphor and antimony donors in silicon excited by CO2 laser radiation was studied. The laser action originates from 2p<sub>0</sub>->1s(T<sub>2</sub>) intracenter transitions. A compressive force applied to the silicon crystal decreases the laser threshold by one order of magnitude. The output power depends nonmonotonically on the stress, while the emission frequency does not change. The results are explained by changes of the donor electronic structure, which do not affect the energy gap between the laser states, and a resonant interaction with acoustic f-TA and g-TA phonons that disappears with increasing stress. ©2007 American Institute of Physics

Document Type:Article
Title:Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon
Authors:
AuthorsInstitution or Email of Authors
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Tsyplenkov, VeniaminInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Kovalesky, KonstantinInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Pavlov, SergeyUNSPECIFIED
Böttger, UteUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, Germany
Abrosimov, NikolayInstitute of Crystal Growth, 12489 Berlin, Germany
Nötzel, NataliaInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Date:29 January 2007
Journal or Publication Title:Applied Physics Letters
Volume:90
DOI:10.1063/1.2431568
Page Range:051101-1-051101-3
Publisher:American Institute of Physics
Status:Published
Keywords:antimony; silicon; elemental semiconductors; stress effects; phosphorus; stimulated emission; energy gap; phonon-phonon interactions; impurity states; submillimetre wave spectra
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:09 Jul 2007
Last Modified:12 Dec 2013 20:25

Repository Staff Only: item control page

Browse
Search
Help & Contact
Informationen
electronic library is running on EPrints 3.3.12
Copyright © 2008-2012 German Aerospace Center (DLR). All rights reserved.