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Silicon donor and Stokes terahertz lasers

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Riemann, Helge and Abrosimov, Nickolay and Nötzel, Natalia and Zhukavin, Roman and Shastin, Valery (2006) Silicon donor and Stokes terahertz lasers. Journal of Luminescence, 121 (2), pp. 304-310. Elsevier B.V.. DOI: 10.1016/j.jlumin.2006.08.009.

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Abstract

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50–230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (less than 30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain about 1–3 cm<sup>-1</sup> above the laser thresholds (more than 1 kW/cm<sup>2</sup>) and provide 10ps – 1μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6–5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A<sub>1</sub>) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm/GW and the optical threshold intensity is about 100 kW/cm<sup>2</sup>.

Document Type:Article
Title:Silicon donor and Stokes terahertz lasers
Authors:
AuthorsInstitution or Email of Authors
Pavlov, SergeyUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Hovenier, Jacob NielsKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Klaassen, Tjeerd OnnoKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Riemann, HelgeInstitute of Crystal Growth, Berlin, Germany
Abrosimov, NickolayInstitute of Crystal Growth, Berlin, Germany
Nötzel, NataliaInstitute of Crystal Growth, Berlin, Germany
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, N. Novgorod, Russia
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, N. Novgorod, Russia
Date:December 2006
Journal or Publication Title:Journal of Luminescence
Volume:121
DOI:10.1016/j.jlumin.2006.08.009
Page Range:pp. 304-310
Publisher:Elsevier B.V.
Status:Published
Keywords:Silicon, Intracenter laser, Impurity–phonon interaction, Terahertz Raman scattering
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:28 Aug 2007
Last Modified:12 Dec 2013 20:21

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