Silicon Stokes terahertz laser

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman and Shastin, Valery (2007) Silicon Stokes terahertz laser. In: 28th International Conference on the Physics of Semiconductors (893), pp. 1445-1446. 28th International Conference on the Physics of Semiconductors - ICPS 2006, 2006-07-24 - 2006-07-28, Vienna (Austria). ISBN 978-0-7354-0397-0.

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Official URL: http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APCPCS000893000001001445000001&idtype=cvips&gifs=Yes

Abstract

A Raman-type silicon laser at terahertz frequencies has been realized. Stokes-shifted stimulated emission has been observed from silicon crystals doped by antimony donors when optically excited by an infrared free electron laser. The Raman lasing was obtained due to resonant scattering on electronic states of a donor atom. ©2007 American Institute of Physics

Document Type:

Conference or Workshop Item (Poster)

Title:

Silicon Stokes terahertz laser

Authors:

Authors	Institution or Email of Authors
Pavlov, Sergey
Hübers, Heinz-Wilhelm
Hovenier, Jacob Niels	Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Klaassen, Tjeerd Onno	Kavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Carder, Damian A.	FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Phillips, P. Jonathan	FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Redlich, Britta	FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Riemann, Helge	Institute of Crystal Growth, 12489 Berlin, Germany
Zhukavin, Roman	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, Valery	Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Date:

10 April 2007

Journal or Publication Title:

28th International Conference on the Physics of Semiconductors

Refereed publication:

Yes

In ISI Web of Science:

Page Range:

pp. 1445-1446

Series Name:

AIP Conference Proceedings

ISBN:

978-0-7354-0397-0

Status:

Published

Keywords:

semiconductor lasers; silicon; Raman spectra; stimulated emission; free electron lasers

Event Title:

28th International Conference on the Physics of Semiconductors - ICPS 2006

Event Location:

Vienna (Austria)

Event Type:

international Conference

Event Dates:

2006-07-24 - 2006-07-28

Organizer:

Austrian Research Centers, Vienna University of Technology, Gesellschaft für Mikro- und Nanoelektronik, Austria

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Space

HGF - Program Themes:

W EW - Erforschung des Weltraums

DLR - Research area:

Space

DLR - Program:

W EW - Erforschung des Weltraums

DLR - Research theme (Project):

W - Projekt SOFIA (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Terahertz and Infrared Sensors

Deposited By:

Dr. Sergey Pavlov

Deposited On:

10 Jul 2007

Last Modified:

14 Jan 2010 23:17

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