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Silicon Donor and Stokes terahertz lasers

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman and Shastin, Valery (2006) Silicon Donor and Stokes terahertz lasers. In: The European Material Research Society Conference, D-S5-01. 2006 Spring Meeting, 2006-05-29 - 2006-06-02, Acropolis Congress Center, Nice, France.

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Abstract

In the past few years significant progress has been made towards silicon-based lasers. Numerous approaches in the infrared wavelength range were elaborated to overcome the indirect bandgap structure of silicon, such as nanocrystals, A-centre mediated direct recombination, Si/SiO2 and Si/SiGe superlattices, porous silicon, erbium-doped silicon, and silicon light-emitting diodes. Mid-infrared 1.67 µm Raman silicon laser has been achieved. Recently developed optically pumped silicon-based THz lasers involve direct optical transitions between donor excited states (Intracentre Si Donor laser) or the light scattering at donor centre states coupled by resonant interaction with an inter intervalley transverse acoustic g-phonon in silicon (Brillouin-type Si Stokes laser). Different features of the population inversion mechanisms in the silicon lasers allow covering the frequency range from 1 to 7 THz with a few tenths of mW output power under pumping by mid-infrared pulsed lasers. The laser mechanisms continue a development of basic silicon lasers following the terahertz Si intracentre laser and the infrared Raman Si laser.

Document Type:Conference or Workshop Item (Speech)
Title:Silicon Donor and Stokes terahertz lasers
Authors:
AuthorsInstitution or Email of Authors
Pavlov, SergeyUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Hovenier, Jacob NielsKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Klaassen, Tjeerd OnnoKavli Institute of Nanoscience Delft, Delft University of Technology, Delft, The Netherlands
Carder, Damian A.FOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Phillips, P. JonathanFOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The Netherlands
Riemann, HelgeInstitute of Crystal Growth, 12489 Berlin, Germany
Zhukavin, RomanInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Shastin, ValeryInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Date:May 2006
Journal or Publication Title:The European Material Research Society Conference
Refereed publication:Yes
In ISI Web of Science:No
Page Range:D-S5-01
Editors:
EditorsEmail
E-MRS IUMRS ICEM, UNSPECIFIED
Status:Published
Keywords:Terahertz laser, silicon laser
Event Title:2006 Spring Meeting
Event Location:Acropolis Congress Center, Nice, France
Event Type:international Conference
Event Dates:2006-05-29 - 2006-06-02
Organizer:E-MRS
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:04 Sep 2006
Last Modified:27 Apr 2009 13:03

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