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Frequency tunability of the terahertz silicon laser by a magnetic field

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Kimmitt, Maurice F. and Riemann, Helge and Shastin, Valery N. (2006) Frequency tunability of the terahertz silicon laser by a magnetic field. Applied Physics Letters, 89 (021108), 021108-1-021108-3. American Institute of Physics. DOI: 10.1063/1.2220551.

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By applying a magnetic field to the terahertz intracenter silicon laser the degeneracy of the donor states is lifted. In the case of a bismuth doped silicon laser operating at 6 THz it is demonstrated that this effect can be used to tune the emission frequency. The frequency change depends on the relative orientation of the magnetic field and the crystallographic axis of the laser. The tuning rate is 40 - 60 GHz/T. The frequency tunability is explained by the linear Zeeman effect which splits the 2p<sub>/pm</sub> donor state acting as the upper laser level in the Si:Bi laser.

Document Type:Article
Title:Frequency tunability of the terahertz silicon laser by a magnetic field
AuthorsInstitution or Email of Authors
Hübers, Heinz-WilhelmUNSPECIFIED
Kimmitt, Maurice F.Physics Centre, University of Essex, Colchester, United Kingdom
Riemann, HelgeInstitute of Crystal Growth, Berlin, Germany
Shastin, Valery N.Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Date:10 July 2006
Journal or Publication Title:Applied Physics Letters
Page Range:021108-1-021108-3
Publisher:American Institute of Physics
Keywords:Terahertz laser, silicon laser, frequency tunability
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Projekt SOFIA (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:04 Sep 2006
Last Modified:12 Dec 2013 20:20

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