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Double acceptor doped Ge: A new medium for inter-valence-band lasers

Bründermann, E. and Linhart, A.M. and Reichertz, L. and Röser, H.P. and Dubon, O.D. and Hansen, W.L. and Sirmain, G. and Haller, E.E. (1996) Double acceptor doped Ge: A new medium for inter-valence-band lasers. Applied Physics Letters, 68, pp. 3075-3077.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=1996,
Title:Double acceptor doped Ge: A new medium for inter-valence-band lasers
Authors:
AuthorsInstitution or Email of Authors
Bründermann, E.UNSPECIFIED
Linhart, A.M.UNSPECIFIED
Reichertz, L.UNSPECIFIED
Röser, H.P.UNSPECIFIED
Dubon, O.D.Lawrence Berkeley National Laboratory, University of California, Berkeley, CA, USA
Hansen, W.L.wie Dubon
Sirmain, G.wie Dubon
Haller, E.E.wie Dubon
Date:1996
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:68
Page Range:pp. 3075-3077
Status:Published
Keywords:THz Germanium Laser, double acceptors, satellite, silicon
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EO - Erdbeobachtung
DLR - Research area:Space
DLR - Program:W EO - Erdbeobachtung
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Institut für Weltraumsensorik
Deposited By: elib DLR-Beauftragter
Deposited On:02 Apr 2006
Last Modified:27 Apr 2009 09:59

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