Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman Kh. and Shastin, Valery N. (2006) Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors. Physical Review Letters, 96, . American Physical Society. DOI: 10.1103/PhysRevLett.96.037404.

PDF - Registered users only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
380Kb

Official URL: http://link.aps.org/abstract/PRL/v96/e037404

Abstract

Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g-phonon in silicon (2.92 THz). The emission frequency covers the range of 4.6–5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A<sub>1</sub>) donor states (separation 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

Document Type:

Article

Title:

Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

Authors:

Authors	Institution or Email of Authors
Pavlov, Sergey
Hübers, Heinz-Wilhelm
Hovenier, Jacob Niels	Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft, The Netherlands
Klaassen, Tjeerd Onno	Kavli Institute of Nanoscience Delft, Delft University of Technology, 2600 GA Delft, The Netherlands
Carder, Damian A.	FOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands
Phillips, P. Jonathan	FOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands
Redlich, Britta	FOM-Institute for Plasma Physics, 3439 MN Nieuwegein, The Netherlands
Riemann, Helge	Institute of Crystal Growth, Max-Born-Strasse 2, 12489 Berlin, Germany
Zhukavin, Roman Kh.	Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
Shastin, Valery N.	Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

Date:

27 January 2006

Journal or Publication Title:

Physical Review Letters

Refereed publication:

Yes

In ISI Web of Science:

Yes

Volume:

DOI:

10.1103/PhysRevLett.96.037404

Page Range:

Publisher:

American Physical Society

Status:

Published

Keywords:

Stokes lasing, silicon, terahertz

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Space

HGF - Program Themes:

W EW - Erforschung des Weltraums

DLR - Research area:

Space

DLR - Program:

W EW - Erforschung des Weltraums

DLR - Research theme (Project):

W - Projekt SOFIA (old)

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Terahertz and Infrared Sensors

Deposited By:

Dr. Sergey Pavlov

Deposited On:

16 Feb 2006

Last Modified:

14 Jan 2010 20:58

Repository Staff Only: item control page