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Ultrashort pulse damage of Si and Ge semiconductors

Allenspacher, P. and Riede, W. and Hüttner, B. (2002) Ultrashort pulse damage of Si and Ge semiconductors. Boulder Damage Symposium, Boulder, Colorado, USA, 16-18 September 2002.

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Abstract

An investigation of ultrashort pulse damage threshold of semiconductors (Si, Ge) has been carried out. As the source of radiation, a Clark CPA Ti:sapphire laser system (wavelength 775 nm) has been used. It produces laser pulses of 0.5 mJ pulse energy at 1 kHz repetition rate, providing a Gaussian-like beam profile. Compressor detuning allowed to vary the pulse duration from 150 fs to 20 ps. The laser damage thresholds were measured for this pulse duration range. The damage morphologies were investigated with various microscopic inspection techniques like Nomarski DIC, atomic force microscopy and white light interference microscopy.

Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=2003,
Title:Ultrashort pulse damage of Si and Ge semiconductors
Authors:
AuthorsInstitution or Email of Authors
Allenspacher, P.UNSPECIFIED
Riede, W.UNSPECIFIED
Hüttner, B.UNSPECIFIED
Date:2002
Status:Published
Keywords:ultra short pulse damage, semiconductors, Ti:sapphire laser
Event Title:Boulder Damage Symposium, Boulder, Colorado, USA, 16-18 September 2002
Organizer:SPIE
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: Dr.rer.nat. Hans-Albert Eckel
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:48

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