Ultrashort pulse damage of Si and Ge semiconductors
Allenspacher, P. and Riede, W. and Hüttner, B. (2002) Ultrashort pulse damage of Si and Ge semiconductors. Boulder Damage Symposium, Boulder, Colorado, USA, 16-18 September 2002.
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An investigation of ultrashort pulse damage threshold of semiconductors (Si, Ge) has been carried out. As the source of radiation, a Clark CPA Ti:sapphire laser system (wavelength 775 nm) has been used. It produces laser pulses of 0.5 mJ pulse energy at 1 kHz repetition rate, providing a Gaussian-like beam profile. Compressor detuning allowed to vary the pulse duration from 150 fs to 20 ps. The laser damage thresholds were measured for this pulse duration range. The damage morphologies were investigated with various microscopic inspection techniques like Nomarski DIC, atomic force microscopy and white light interference microscopy.
|Document Type:||Conference or Workshop Item (Paper)|
|Title:||Ultrashort pulse damage of Si and Ge semiconductors|
|Keywords:||ultra short pulse damage, semiconductors, Ti:sapphire laser|
|Event Title:||Boulder Damage Symposium, Boulder, Colorado, USA, 16-18 September 2002|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||Dr.rer.nat. Hans-Albert Eckel|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:48|
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