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Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy

Wöhl, G. and Kasper, E. and Klose, M. and Hackbarth, T. and Kibbel, H. (2001) Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy. GADEST 2001, Catania (Italy), September 30 - October 4, 2001.

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Document Type:Conference or Workshop Item (Speech)
Additional Information: LIDO-Berichtsjahr=2001,
Title:Study of Relaxed Si0.7Ge0.3 Buffers Grown on Patterned Silicon Substrates by Raman Spectroscopy
Authors:
AuthorsInstitution or Email of Authors
Wöhl, G.UNSPECIFIED
Kasper, E.UNSPECIFIED
Klose, M.UNSPECIFIED
Hackbarth, T.UNSPECIFIED
Kibbel, H.UNSPECIFIED
Date:2001
Status:Published
Event Title:GADEST 2001, Catania (Italy), September 30 - October 4, 2001
Organizer:CNR-IMETEM
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:40

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