elib
DLR-Header
DLR-Logo -> http://www.dlr.de
DLR Portal Home | Imprint | Contact | Deutsch
Fontsize: [-] Text [+]

Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs

Wöhl, G. and Dudek, V. and Graf, M. and Kibbel, H. and Herzog, H.-J. and Klose, M. (2000) Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs. Thin Solid Films, 369, pp. 175-181.

Full text not available from this repository.


Document Type:Article
Additional Information: LIDO-Berichtsjahr=2001,
Title:Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs
Authors:
AuthorsInstitution or Email of Authors
Wöhl, G.UNSPECIFIED
Dudek, V.UNSPECIFIED
Graf, M.UNSPECIFIED
Kibbel, H.UNSPECIFIED
Herzog, H.-J.UNSPECIFIED
Klose, M.UNSPECIFIED
Date:2000
Journal or Publication Title:Thin Solid Films
Refereed publication:No
In SCOPUS:No
In ISI Web of Science:No
Volume:369
Page Range:pp. 175-181
Status:Published
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:40

Repository Staff Only: item control page

Browse
Search
Help & Contact
Informationen
electronic library is running on EPrints 3.3.12
Copyright © 2008-2012 German Aerospace Center (DLR). All rights reserved.