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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy

Zhou, H. and Rühm, A. and Jin-Phillipp, N.Y. and Phillipp, F. and Gross, M. and Schröder, H. (2001) Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy. Journal of Materials Research, 16 (1), pp. 261-267.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=2001,
Title:Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Authors:
AuthorsInstitution or Email of Authors
Zhou, H.UNSPECIFIED
Rühm, A.UNSPECIFIED
Jin-Phillipp, N.Y.UNSPECIFIED
Phillipp, F.UNSPECIFIED
Gross, M.UNSPECIFIED
Schröder, H.UNSPECIFIED
Date:2001
Journal or Publication Title:Journal of Materials Research
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:16
Page Range:pp. 261-267
Status:Published
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:40

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