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Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy
Zhou, H. and Rühm, A. and Jin-Phillipp, N.Y. and Phillipp, F. and Gross, M. and Schröder, H. (2001) Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy. Journal of Materials Research, 16 (1), pp. 261-267.
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| Document Type: | Article | ||||||||||||||
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| Additional Information: | LIDO-Berichtsjahr=2001, | ||||||||||||||
| Title: | Characterization of GaN grown on sapphire by laser-induced molecular beam epitaxy | ||||||||||||||
| Authors: |
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| Date: | 2001 | ||||||||||||||
| Journal or Publication Title: | Journal of Materials Research | ||||||||||||||
| Refereed publication: | Yes | ||||||||||||||
| In ISI Web of Science: | Yes | ||||||||||||||
| Volume: | 16 | ||||||||||||||
| Page Range: | pp. 261-267 | ||||||||||||||
| Status: | Published | ||||||||||||||
| HGF - Research field: | Energy | ||||||||||||||
| HGF - Program: | Aeronautics | ||||||||||||||
| HGF - Program Themes: | L - no assignement | ||||||||||||||
| DLR - Research area: | Energy | ||||||||||||||
| DLR - Program: | L - no assignement | ||||||||||||||
| DLR - Research theme (Project): | L - Laser Research and Technology | ||||||||||||||
| Location: | Stuttgart | ||||||||||||||
| Institutes and Institutions: | Institute of Technical Physics | ||||||||||||||
| Deposited By: | elib DLR-Beauftragter | ||||||||||||||
| Deposited On: | 16 Sep 2005 | ||||||||||||||
| Last Modified: | 06 Jan 2010 14:40 |
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