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Characterization of GaN epilayers grown on sapphire and SiC substrates

Wieser, N. and Klose, M. and Scholz, F. and Off, J. and Dutrieux, Y. (1998) Characterization of GaN epilayers grown on sapphire and SiC substrates. In: Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum Fols. 264-268 (1998, pp. 1355-1358. Trans Tech Publications, Schweiz. International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Schweden, September 1997.

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Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Characterization of GaN epilayers grown on sapphire and SiC substrates
Authors:
AuthorsInstitution or Email of Authors
Wieser, N.UNSPECIFIED
Klose, M.UNSPECIFIED
Scholz, F.4.Physik.Institut, Universität Stuttgart
Off, J.4.Physik.Institut, Universität Stuttgart
Dutrieux, Y.4.Physik.Institut, Universität Stuttgart
Date:1998
Journal or Publication Title:Silicon Carbide, III-Nitrides and Related Materials
Volume:Materials Science Forum Fols. 264-268 (1998
Page Range:pp. 1355-1358
Editors:
EditorsEmail
Pensl, G.UNSPECIFIED
Morkoc, H.UNSPECIFIED
Monemar, B.UNSPECIFIED
Janzen, E.UNSPECIFIED
Publisher:Trans Tech Publications, Schweiz
Status:Published
Keywords:Raman scattering, strain, carrier concentration
Event Title:International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Schweden, September 1997
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:36

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