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Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN
Wieser, N. and Klose, M. and Scholz, F. and Off, J. (1998) Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN. In: Silicon Carbide, III-Nitrides and Related Materials, Materials Science Forum Vols. 264-268 (1998), pp. 1351-1354. Trans Tech Pulications, Schweiz. International Conference on Silicon Carbide, III-Nitrides and Related materials, Stockholm, Schweden, September 1997.
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| Document Type: | Conference or Workshop Item (Paper) | ||||||||||
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| Additional Information: | LIDO-Berichtsjahr=1999, | ||||||||||
| Title: | Effect of thermal strain strain and carrier concentration on the phonon frequencies of GaN | ||||||||||
| Authors: |
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| Date: | 1998 | ||||||||||
| Journal or Publication Title: | Silicon Carbide, III-Nitrides and Related Materials | ||||||||||
| Volume: | Materials Science Forum Vols. 264-268 (1998) | ||||||||||
| Page Range: | pp. 1351-1354 | ||||||||||
| Editors: |
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| Publisher: | Trans Tech Pulications, Schweiz | ||||||||||
| Status: | Published | ||||||||||
| Keywords: | Raman scattering, Plasmon-Phonon Interactions, Strain. | ||||||||||
| Event Title: | International Conference on Silicon Carbide, III-Nitrides and Related materials, Stockholm, Schweden, September 1997 | ||||||||||
| HGF - Research field: | Energy | ||||||||||
| HGF - Program: | Aeronautics | ||||||||||
| HGF - Program Themes: | L - no assignement | ||||||||||
| DLR - Research area: | Energy | ||||||||||
| DLR - Program: | L - no assignement | ||||||||||
| DLR - Research theme (Project): | L - Laser Research and Technology | ||||||||||
| Location: | Stuttgart | ||||||||||
| Institutes and Institutions: | Institute of Technical Physics | ||||||||||
| Deposited By: | elib DLR-Beauftragter | ||||||||||
| Deposited On: | 16 Sep 2005 | ||||||||||
| Last Modified: | 06 Jan 2010 14:36 |
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