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Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN

Wieser, N. and Ambacher, O. and Angerer, H. and Dimitrov, R. and Stutzmann, M. and Stritzker, B. Institut f. Physik, Universität Augsburg), and Lindner, J.K.N. (1999) Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN. Physica Status Solidi (b), 216, pp. 807-811.

Full text not available from this repository.


Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
Authors:
AuthorsInstitution or Email of Authors
Wieser, N.UNSPECIFIED
Ambacher, O.Walter Schottky Institut, TU München
Angerer, H.Walter Schottky Institut, TU München
Dimitrov, R.Walter Schottky Institut, TU München
Stutzmann, M.Walter Schottky Institut, TU München
Stritzker, B. Institut f. Physik, Universität Augsburg), UNSPECIFIED
Lindner, J.K.N.Institut f. Physik, Universität Augsburg
Date:1999
Journal or Publication Title:Physica Status Solidi (b)
Refereed publication:No
In SCOPUS:No
In ISI Web of Science:No
Volume:216
Page Range:pp. 807-811
Status:Published
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:36

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