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Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

Wieser, N. and Ambacher, O. and Felsl, H.-P. and Görgens, L. and Stutzmann, M. (1999) Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy. Applied Physics Letters, 74, pp. 3981-3983.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
Authors:
AuthorsInstitution or Email of Authors
Wieser, N.UNSPECIFIED
Ambacher, O.Walter Schottky Institut, TU München
Felsl, H.-P.Walter Schottky Institut, TU München
Görgens, L.Walter Schottky Institut, TU München
Stutzmann, M.Walter Schottky Institut, TU München
Date:1999
Journal or Publication Title:Applied Physics Letters
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:74
Page Range:pp. 3981-3983
Status:Published
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:36

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