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Laser induced molecular beam epitaxy of GaN

Hüttner, B. and Gross, M. and Müller, Th. and Schröder, H. (1998) Laser induced molecular beam epitaxy of GaN. In: European Conference on Laser Treatment of Materials, pp. 469-474. Werkstoff-Informationsgesellschaft. European Conference on Laser Treatment of Materials, Hanover, 1998. ISBN 3-88355-263-1.

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Abstract

GaN films were grown with reactive laser induced molecular beam epitaxy on sapphire and SiC substrates. The radiation source was a picosecond Nd:YAG laser (1064 nm) with a repetition rate between 2 and 4kHz. As target material fluid gallium in N2-atmosphere (5.E-02 mbar) was used. The GaN films are epitaxially with (0001) orientation. By PL measurements near-band-edge emission was demonstrated.

Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Laser induced molecular beam epitaxy of GaN
Authors:
AuthorsInstitution or Email of Authors
Hüttner, B.UNSPECIFIED
Gross, M.UNSPECIFIED
Müller, Th.UNSPECIFIED
Schröder, H.UNSPECIFIED
Date:1998
Journal or Publication Title:European Conference on Laser Treatment of Materials
Page Range:pp. 469-474
Editors:
EditorsEmail
Mordike, B.L.UNSPECIFIED
Publisher:Werkstoff-Informationsgesellschaft
ISBN:3-88355-263-1
Status:Published
Keywords:Gallium nitride, laser induced molecular beam epitaxy.
Event Title:European Conference on Laser Treatment of Materials, Hanover, 1998
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:35

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