Laser induced molecular beam epitaxy of GaN

Hüttner, B. and Gross, M. and Müller, Th. and Schröder, H. (1998) Laser induced molecular beam epitaxy of GaN. In: European Conference on Laser Treatment of Materials, pp. 469-474. Werkstoff-Informationsgesellschaft. European Conference on Laser Treatment of Materials, Hanover, 1998. ISBN 3-88355-263-1.

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Abstract

GaN films were grown with reactive laser induced molecular beam epitaxy on sapphire and SiC substrates. The radiation source was a picosecond Nd:YAG laser (1064 nm) with a repetition rate between 2 and 4kHz. As target material fluid gallium in N2-atmosphere (5.E-02 mbar) was used. The GaN films are epitaxially with (0001) orientation. By PL measurements near-band-edge emission was demonstrated.

Document Type:

Conference or Workshop Item (Paper)

Additional Information:

LIDO-Berichtsjahr=1999,

Title:

Laser induced molecular beam epitaxy of GaN

Authors:

Authors	Institution or Email of Authors
Hüttner, B.
Gross, M.
Müller, Th.
Schröder, H.

Date:

1998

Journal or Publication Title:

European Conference on Laser Treatment of Materials

Page Range:

pp. 469-474

Editors:

Editors	Email
Mordike, B.L.

Publisher:

Werkstoff-Informationsgesellschaft

ISBN:

3-88355-263-1

Status:

Published

Keywords:

Gallium nitride, laser induced molecular beam epitaxy.

Event Title:

European Conference on Laser Treatment of Materials, Hanover, 1998

HGF - Research field:

Energy

HGF - Program:

Aeronautics

HGF - Program Themes:

L - no assignement

DLR - Research area:

Energy

DLR - Program:

L - no assignement

DLR - Research theme (Project):

L - Laser Research and Technology

Location:

Stuttgart

Institutes and Institutions:

Institute of Technical Physics

Deposited By:

elib DLR-Beauftragter

Deposited On:

16 Sep 2005

Last Modified:

06 Jan 2010 14:35

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