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Properties of GaN thin films prepared by laser induced molecular beam epitaxy

Gross, M. and Henn, G. and Schröder, H. (1997) Properties of GaN thin films prepared by laser induced molecular beam epitaxy. In: III-V Nitride Materials and Processes, 97-34, pp. 236-243. Second Symposium on III-V Nitride materials and Processes, Paris 1997. ISBN 1-56677-187-0.

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Abstract

We achieve high quality epitaxial GaN film growth on sapphire (0001) and 6H-SiC (0001) substrates by laser induced molecular beam epitaxy (LIMBE). Pure metal targets were ablated with a picosecond Nd:YAG laser in a nitrogen atmospere of 5E-02mbar. The films were grown at substrate temperatures between 700 and 800°C. Composition, structure and optical properties of the nitride films were chara<cterized with EDX, TEM, XRD, x-ray rocking curve measurements, AFM, SEM and PL spectroscopy. The films are smooth, stoichiometric, (0001) oriented and consist purely of the wurtzite phase. They show a x-ray rocking curve FWHM of 9 arcmin and a strong excitonic emission with a FWHM of 6.4meV in the PL spectrum at 4.3 K. Recent results of DLTS investigations on our GaN films revealed a residual carrier concentration of <1.E+17cm^-3.

Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Properties of GaN thin films prepared by laser induced molecular beam epitaxy
Authors:
AuthorsInstitution or Email of Authors
Gross, M.UNSPECIFIED
Henn, G.UNSPECIFIED
Schröder, H.UNSPECIFIED
Date:1997
Journal or Publication Title:III-V Nitride Materials and Processes
Volume:97-34
Page Range:pp. 236-243
Editors:
EditorsEmail
The Electrochemical Society, Inc.UNSPECIFIED
ISBN:1-56677-187-0
Status:Published
Keywords:Gallium nitride, laser induced molecular beam epitaxy
Event Title:Second Symposium on III-V Nitride materials and Processes, Paris 1997
Organizer:The Electrochemical Society
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:35

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