Gross, M. and Henn, G. and Schröder, H. (1997) Properties of GaN thin films prepared by laser induced molecular beam epitaxy. In: III-V Nitride Materials and Processes, 97-34, pp. 236-243. Second Symposium on III-V Nitride materials and Processes, Paris 1997. ISBN 1-56677-187-0.
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We achieve high quality epitaxial GaN film growth on sapphire (0001) and 6H-SiC (0001) substrates by laser induced molecular beam epitaxy (LIMBE). Pure metal targets were ablated with a picosecond Nd:YAG laser in a nitrogen atmospere of 5E-02mbar. The films were grown at substrate temperatures between 700 and 800°C. Composition, structure and optical properties of the nitride films were chara<cterized with EDX, TEM, XRD, x-ray rocking curve measurements, AFM, SEM and PL spectroscopy. The films are smooth, stoichiometric, (0001) oriented and consist purely of the wurtzite phase. They show a x-ray rocking curve FWHM of 9 arcmin and a strong excitonic emission with a FWHM of 6.4meV in the PL spectrum at 4.3 K. Recent results of DLTS investigations on our GaN films revealed a residual carrier concentration of <1.E+17cm^-3.
|Document Type:||Conference or Workshop Item (Paper)|
|Title:||Properties of GaN thin films prepared by laser induced molecular beam epitaxy|
|Journal or Publication Title:||III-V Nitride Materials and Processes|
|Page Range:||pp. 236-243|
|Keywords:||Gallium nitride, laser induced molecular beam epitaxy|
|Event Title:||Second Symposium on III-V Nitride materials and Processes, Paris 1997|
|Organizer:||The Electrochemical Society|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||other|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:35|
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