Properties of GaN thin films prepared by laser induced molecular beam epitaxy
Gross, M. and Henn, G. and Schröder, H. (1997) Properties of GaN thin films prepared by laser induced molecular beam epitaxy. In: III-V Nitride Materials and Processes, 97-34, pp. 236-243. Second Symposium on III-V Nitride materials and Processes, Paris 1997. ISBN 1-56677-187-0.
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We achieve high quality epitaxial GaN film growth on sapphire (0001) and 6H-SiC (0001) substrates by laser induced molecular beam epitaxy (LIMBE). Pure metal targets were ablated with a picosecond Nd:YAG laser in a nitrogen atmospere of 5E-02mbar. The films were grown at substrate temperatures between 700 and 800°C. Composition, structure and optical properties of the nitride films were chara<cterized with EDX, TEM, XRD, x-ray rocking curve measurements, AFM, SEM and PL spectroscopy. The films are smooth, stoichiometric, (0001) oriented and consist purely of the wurtzite phase. They show a x-ray rocking curve FWHM of 9 arcmin and a strong excitonic emission with a FWHM of 6.4meV in the PL spectrum at 4.3 K. Recent results of DLTS investigations on our GaN films revealed a residual carrier concentration of <1.E+17cm^-3.
|Document Type:||Conference or Workshop Item (Paper)|
|Title:||Properties of GaN thin films prepared by laser induced molecular beam epitaxy|
|Journal or Publication Title:||III-V Nitride Materials and Processes|
|Page Range:||pp. 236-243|
|Keywords:||Gallium nitride, laser induced molecular beam epitaxy|
|Event Title:||Second Symposium on III-V Nitride materials and Processes, Paris 1997|
|Organizer:||The Electrochemical Society|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:35|
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