Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
Gross, M. and Henn, G. and Schröder, H. (1997) Growth of GaN and AlN thin films by laser induced molecular beam epitaxy. Materials Science & Engineering, 50, pp. 16-19.
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Hexagonal GaN and AIN thin films were grown by laser induced molecular beam epitaxy using Al or Ga metal as target material and N2 as nitrogen source. The films were deposited on sapphire (0001) and SiC (0001) substrates. Epitaxial growth of GaN has been achieved at 730°C and 1.E-03 mbar N2 pressure. The AlN films were polycrystalline with predominant (0001) orientation.
|Title:||Growth of GaN and AlN thin films by laser induced molecular beam epitaxy|
|Journal or Publication Title:||Materials Science & Engineering|
|In ISI Web of Science:||Yes|
|Page Range:||pp. 16-19|
|Keywords:||AlN, GaN, laser induced molecular beam epitaxy|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:35|
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