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Growth of GaN and AlN thin films by laser induced molecular beam epitaxy

Gross, M. and Henn, G. and Schröder, H. (1997) Growth of GaN and AlN thin films by laser induced molecular beam epitaxy. Materials Science & Engineering, 50, pp. 16-19.

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Abstract

Hexagonal GaN and AIN thin films were grown by laser induced molecular beam epitaxy using Al or Ga metal as target material and N2 as nitrogen source. The films were deposited on sapphire (0001) and SiC (0001) substrates. Epitaxial growth of GaN has been achieved at 730°C and 1.E-03 mbar N2 pressure. The AlN films were polycrystalline with predominant (0001) orientation.

Document Type:Article
Additional Information: LIDO-Berichtsjahr=1999,
Title:Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
Authors:
AuthorsInstitution or Email of Authors
Gross, M.UNSPECIFIED
Henn, G.UNSPECIFIED
Schröder, H.UNSPECIFIED
Date:1997
Journal or Publication Title:Materials Science & Engineering
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:50
Page Range:pp. 16-19
Status:Published
Keywords:AlN, GaN, laser induced molecular beam epitaxy
HGF - Research field:Energy
HGF - Program:Aeronautics
HGF - Program Themes:other
DLR - Research area:Energy
DLR - Program:L - no assignement
DLR - Research theme (Project):L - Laser Research and Technology
Location: Stuttgart
Institutes and Institutions:Institute of Technical Physics
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:06 Jan 2010 14:35

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