Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE
Gross, M. and Henn, G. and Ziegler, J. and Allenspacher, P. and Cychy, C. and Schröder, H. (1999) Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE. Materials Science & Engineering B, B59, pp. 94-97.
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Epitaxial GaN films were grown on sapphire (0001) and 6H-SiC (0001) by reactive laser ablation of a metallic Ga target under continuous nitrogen flow. As radiation source a Nd:YAG laser with 30 ps pulses and a pulse rate of 1-3 kHz was used. The undoped films revealed a Hall background carrier concentration of 6xE^-17cm^-3 and an excitonic near band edge emission of 3.47 eV at 4.3 K. Mg incorporation into the Ga films was achieved by modulation of the evaporation from two targets (Ga and Mg) by laser beam scanning. CL, SIMS and AES measurements confirmed the Mg-doping of the films.
|Title:||Characteristics of undoped and magnesium doped GaN films grown by laser induced MBE|
|Journal or Publication Title:||Materials Science & Engineering B|
|In ISI Web of Science:||Yes|
|Page Range:||pp. 94-97|
|Keywords:||Laser induced molecular beam epitaxy, GaN, Mg doping.|
|HGF - Research field:||Energy|
|HGF - Program:||Aeronautics|
|HGF - Program Themes:||L - no assignement|
|DLR - Research area:||Energy|
|DLR - Program:||L - no assignement|
|DLR - Research theme (Project):||L - Laser Research and Technology|
|Institutes and Institutions:||Institute of Technical Physics|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||06 Jan 2010 14:35|
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