Terahertz optically pumped silicon lasers
Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman Kh. and Shastin, Valery N.
Terahertz optically pumped silicon lasers.
In: 2005 Erice, Italy, 35th Workshop: Physics and Technology of THz Photonics.
NEST, Pisa, Italy.
Physics and Technology of THz Photonics 2005 (35th Workshop), 2005-07-20 - 2005-07-26, Erice (Italy).
Stimulated terahertz (THz) emission from silicon single crystals doped by group-V donors has been obtained by optical excitation with pulsed infrared lasers. Pumping by a conventional TEA CO<sub>2</sub> laser results in lasing on discrete lines between 1.3 and 7 THz (see figure). Laser thresholds can be as low as 10 kW/cm<sup>2</sup>. They depend on the donors species and the laser mechanism. Intracentre population inversion is realized between particular excited states which are large-spaced due to the chemical shift of the donor binding energy. The lifetime of an electron in an excited state (up to ~70 ps) is determined by the efficiency of phonon-assisted nonradiative relaxation. Optical excitation by the emission of a frequency-tunable free electron laser results in two different types of lasing. At relatively low pump intensities (~1 kW/cm<sup>2</sup>) the intracentre mechanism of lasing is dominating. At pump intensities above ~100 kW/cm<sup>2</sup> stimulated scattering of pump photons on transverse acoustic intervalley phonons can occur in the vicinity of an impurity atom. This results in laser emission in the frequency range from 4.6 to 5.8 THz. In this case the laser frequency can be tuned proportionally to the pump frequency.
|Document Type:||Conference or Workshop Item (Speech)|
|Title:||Terahertz optically pumped silicon lasers|
|Authors||Institution or Email of Authors|
|Hovenier, Jacob Niels||Kavli Institute of Nanoscience, Delft University of Technology, Delft, The NL|
|Klaassen, Tjeerd Onno||Kavli Institute of Nanoscience, Delft University of Technology, Delft, The NL|
|Carder, Damian A.||FOM-Institute for Plasma Physics, Nieuwegein, The NL|
|Phillips, P. Jonathan||FOM-Institute for Plasma Physics, Nieuwegein, The NL|
|Redlich, Britta||FOM-Institute for Plasma Physics, Nieuwegein, The NL|
|Riemann, Helge||Institute for Crystal Growth, Berlin|
|Zhukavin, Roman Kh.||Institute for Physics of Microstructures, RAS, N.Novgorod, Russia|
|Shastin, Valery N.||Institute for Physics of Microstructures, RAS, N.Novgorod, Russia|
|Date:||22 July 2005|
|Journal or Publication Title:||2005 Erice, Italy, 35th Workshop: Physics and Technology of THz Photonics|
|In ISI Web of Science:||No|
|Publisher:||NEST, Pisa, Italy|
|Keywords:||THz, silicon, laser|
|Event Title:||Physics and Technology of THz Photonics 2005 (35th Workshop)|
|Event Location:||Erice (Italy)|
|Event Type:||international Conference|
|Event Dates:||2005-07-20 - 2005-07-26|
|Organizer:||NEST (Pisa), Ettore Majorana Foundation (Erice), TeraNova|
|HGF - Research field:||Aeronautics, Space and Transport (old)|
|HGF - Program:||Space (old)|
|HGF - Program Themes:||W EW - Erforschung des Weltraums|
|DLR - Research area:||Space|
|DLR - Program:||W EW - Erforschung des Weltraums|
|DLR - Research theme (Project):||W - Vorhaben IR-Astronomie (old)|
|Institutes and Institutions:||Institute of Planetary Research > Terahertz and Infrared Sensors|
Dr. Sergey Pavlov
|Deposited On:||01 Dec 2005|
|Last Modified:||12 Dec 2013 20:08|
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