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Terahertz optically pumped silicon lasers

Pavlov, Sergey and Hübers, Heinz-Wilhelm and Hovenier, Jacob Niels and Klaassen, Tjeerd Onno and Carder, Damian A. and Phillips, P. Jonathan and Redlich, Britta and Riemann, Helge and Zhukavin, Roman Kh. and Shastin, Valery N. (2005) Terahertz optically pumped silicon lasers. In: 2005 Erice, Italy, 35th Workshop: Physics and Technology of THz Photonics. NEST, Pisa, Italy. Physics and Technology of THz Photonics 2005 (35th Workshop), 2005-07-20 - 2005-07-26, Erice (Italy).

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Abstract

Stimulated terahertz (THz) emission from silicon single crystals doped by group-V donors has been obtained by optical excitation with pulsed infrared lasers. Pumping by a conventional TEA CO<sub>2</sub> laser results in lasing on discrete lines between 1.3 and 7 THz (see figure). Laser thresholds can be as low as 10 kW/cm<sup>2</sup>. They depend on the donors species and the laser mechanism. Intracentre population inversion is realized between particular excited states which are large-spaced due to the chemical shift of the donor binding energy. The lifetime of an electron in an excited state (up to ~70 ps) is determined by the efficiency of phonon-assisted nonradiative relaxation. Optical excitation by the emission of a frequency-tunable free electron laser results in two different types of lasing. At relatively low pump intensities (~1 kW/cm<sup>2</sup>) the intracentre mechanism of lasing is dominating. At pump intensities above ~100 kW/cm<sup>2</sup> stimulated scattering of pump photons on transverse acoustic intervalley phonons can occur in the vicinity of an impurity atom. This results in laser emission in the frequency range from 4.6 to 5.8 THz. In this case the laser frequency can be tuned proportionally to the pump frequency.

Document Type:Conference or Workshop Item (Speech)
Title:Terahertz optically pumped silicon lasers
Authors:
AuthorsInstitution or Email of Authors
Pavlov, SergeyUNSPECIFIED
Hübers, Heinz-WilhelmUNSPECIFIED
Hovenier, Jacob NielsKavli Institute of Nanoscience, Delft University of Technology, Delft, The NL
Klaassen, Tjeerd OnnoKavli Institute of Nanoscience, Delft University of Technology, Delft, The NL
Carder, Damian A.FOM-Institute for Plasma Physics, Nieuwegein, The NL
Phillips, P. JonathanFOM-Institute for Plasma Physics, Nieuwegein, The NL
Redlich, BrittaFOM-Institute for Plasma Physics, Nieuwegein, The NL
Riemann, HelgeInstitute for Crystal Growth, Berlin
Zhukavin, Roman Kh.Institute for Physics of Microstructures, RAS, N.Novgorod, Russia
Shastin, Valery N.Institute for Physics of Microstructures, RAS, N.Novgorod, Russia
Date:22 July 2005
Journal or Publication Title:2005 Erice, Italy, 35th Workshop: Physics and Technology of THz Photonics
Refereed publication:No
In ISI Web of Science:No
Editors:
EditorsEmail
Beltram, FabioUNSPECIFIED
Benedek, GiorgioUNSPECIFIED
Tredicucci, AlessandroUNSPECIFIED
Publisher:NEST, Pisa, Italy
Status:Published
Keywords:THz, silicon, laser
Event Title:Physics and Technology of THz Photonics 2005 (35th Workshop)
Event Location:Erice (Italy)
Event Type:international Conference
Event Dates:2005-07-20 - 2005-07-26
Organizer:NEST (Pisa), Ettore Majorana Foundation (Erice), TeraNova
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):W - Vorhaben IR-Astronomie (old)
Location: Berlin-Adlershof
Institutes and Institutions:Institute of Planetary Research > Terahertz and Infrared Sensors
Deposited By: Dr. Sergey Pavlov
Deposited On:01 Dec 2005
Last Modified:12 Dec 2013 20:08

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