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Terahertz emission from silicon doped by shallow impurities

Hübers, H.-W. and Pavlov, S. G. and Rümmeli, M. H. and Zhukavin, R. Kh. and Orlova, E. E. and Riemann, H. and Shastin, V. N. (2001) Terahertz emission from silicon doped by shallow impurities. Physica B, 308-310, pp. 232-235.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=2002,
Title:Terahertz emission from silicon doped by shallow impurities
Authors:
AuthorsInstitution or Email of Authors
Hübers, H.-W.UNSPECIFIED
Pavlov, S. G.UNSPECIFIED
Rümmeli, M. H.UNSPECIFIED
Zhukavin, R. Kh.Inst. for Physics, Russian Academy of Sciences, Nizhny Novgorod
Orlova, E. E.Inst. for Physics, Russian Academy of Sciences
Riemann, H.Inst. für Kristallphysik, Berlin
Shastin, V. N.Inst. for Physics, Russian Academy of Sciences
Date:2001
Journal or Publication Title:Physica B
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:308-310
Page Range:pp. 232-235
Status:Published
Keywords:Terahertz, Ferninfrarot, Laser, silizium shallow donors
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 19:12

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