Influence of group II and III shallow acceptors on the gain of p-Ge lasers

Auen, K. and Hübers, H.-W. and Muravjov, A. and Orlova, E. and Pavlov, S. and Shastin, V. and Zhukavin, R. (2001) Influence of group II and III shallow acceptors on the gain of p-Ge lasers. Physica B, 302-303, pp. 334-341.

Full text not available from this repository.

Document Type:

Article

Additional Information:

LIDO-Berichtsjahr=2001,

Title:

Influence of group II and III shallow acceptors on the gain of p-Ge lasers

Authors:

Authors	Institution or Email of Authors
Auen, K.
Hübers, H.-W.
Muravjov, A.	Inst. for Physics, Russian Academy of Sciences, Nizhni Nowgorod
Orlova, E.	Inst. for Physics, Russian Academy of Sciences, Nizhni Nowgorod
Pavlov, S.
Shastin, V.	Inst. for Physics, Russian Academy of Sciences, Nizhni Novgorod
Zhukavin, R.	Inst. for Physics, Russian Academy of Sciences, Nizhni Novgorod

Date:

2001

Journal or Publication Title:

Physica B

Refereed publication:

Yes

In ISI Web of Science:

Yes

Volume:

302-303

Page Range:

pp. 334-341

Status:

Published

Keywords:

Germanium, Ferninfrarot, Terahertz, Laser, Halbleiter, SOFIA

HGF - Research field:

Aeronautics, Space and Transport

HGF - Program:

Space

HGF - Program Themes:

W EW - Erforschung des Weltraums

DLR - Research area:

Space

DLR - Program:

W EW - Erforschung des Weltraums

DLR - Research theme (Project):

UNSPECIFIED

Location:

Berlin-Adlershof

Institutes and Institutions:

Institute of Planetary Research > Institut für Weltraumsensorik und Planetenerkundung
Optical Information Systems > Institut für Weltraumsensorik und Planetenerkundung
Institute of Composite Structures and Adaptive Systems > System Conditioning > Institut für Weltraumsensorik und Planetenerkundung
Remote Sensing Technology Institute > Institut für Weltraumsensorik und Planetenerkundung

Deposited By:

elib DLR-Beauftragter

Deposited On:

16 Sep 2005

Last Modified:

14 Jan 2010 18:53

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