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Influence of group II and III shallow acceptors on the gain of p-Ge lasers

Auen, K. and Hübers, H.-W. and Muravjov, A. and Orlova, E. and Pavlov, S. and Shastin, V. and Zhukavin, R. (2001) Influence of group II and III shallow acceptors on the gain of p-Ge lasers. Physica B, 302-303, pp. 334-341.

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Document Type:Article
Additional Information: LIDO-Berichtsjahr=2001,
Title:Influence of group II and III shallow acceptors on the gain of p-Ge lasers
Authors:
AuthorsInstitution or Email of Authors
Auen, K.UNSPECIFIED
Hübers, H.-W.UNSPECIFIED
Muravjov, A.Inst. for Physics, Russian Academy of Sciences, Nizhni Nowgorod
Orlova, E.Inst. for Physics, Russian Academy of Sciences, Nizhni Nowgorod
Pavlov, S.UNSPECIFIED
Shastin, V.Inst. for Physics, Russian Academy of Sciences, Nizhni Novgorod
Zhukavin, R.Inst. for Physics, Russian Academy of Sciences, Nizhni Novgorod
Date:2001
Journal or Publication Title:Physica B
Refereed publication:Yes
In ISI Web of Science:Yes
Volume:302-303
Page Range:pp. 334-341
Status:Published
Keywords:Germanium, Ferninfrarot, Terahertz, Laser, Halbleiter, SOFIA
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 18:53

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