Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material

Hübers, H.-W. and Auen, K. and Pavlov, S.G. (1999) Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material. In: Part of the EUROPTO Conf. on Terahertz Spectroscopy and Applications II, 3828, 52-. SPIE. EUROPTO Conf. on Terahertz Spectroscopy and Applications II, München, Juni 1999. ISBN 0-8194-3314-4.

Full text not available from this repository.

Document Type:

Conference or Workshop Item (Paper)

Additional Information:

LIDO-Berichtsjahr=1999,

Title:

Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material

Authors:

Authors	Institution or Email of Authors
Hübers, H.-W.	UNSPECIFIED
Auen, K.	UNSPECIFIED
Pavlov, S.G.	Academy of Sciences, Inst.for Physics, Nishni Novgorod, Russia

Date:

1999

Journal or Publication Title:

Part of the EUROPTO Conf. on Terahertz Spectroscopy and Applications II

Volume:

3828

Page Range:

52-

Editors:

Editors	Email
SPIE,	UNSPECIFIED

Publisher:

SPIE

Series Name:

ISBN:

0-8194-3314-4

Status:

Published

Keywords:

far-infrared, laser, semiconductor, silicon terahertz, impurity

Event Title:

EUROPTO Conf. on Terahertz Spectroscopy and Applications II, München, Juni 1999

Organizer:

SPIE

HGF - Research field:

Aeronautics, Space and Transport (old)

HGF - Program:

Space (old)

HGF - Program Themes:

W EW - Erforschung des Weltraums

DLR - Research area:

Space

DLR - Program:

W EW - Erforschung des Weltraums

DLR - Research theme (Project):

UNSPECIFIED

Location:

Berlin-Adlershof

Institutes and Institutions:

Institut für Weltraumsensorik und Planetenerkundung

Deposited By:

elib DLR-Beauftragter

Deposited On:

16 Sep 2005

Last Modified:

14 Jan 2010 18:26

Repository Staff Only: item control page