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Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material

Hübers, H.-W. and Auen, K. and Pavlov, S.G. (1999) Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material. In: Part of the EUROPTO Conf. on Terahertz Spectroscopy and Applications II, 3828, 52-. SPIE. EUROPTO Conf. on Terahertz Spectroscopy and Applications II, München, Juni 1999. ISBN 0-8194-3314-4.

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Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Investigation of Phosphorus Doped Silicon as a Possible Far-Infrared Laser Material
Authors:
AuthorsInstitution or Email of Authors
Hübers, H.-W.UNSPECIFIED
Auen, K.UNSPECIFIED
Pavlov, S.G.Academy of Sciences, Inst.for Physics, Nishni Novgorod, Russia
Date:1999
Journal or Publication Title:Part of the EUROPTO Conf. on Terahertz Spectroscopy and Applications II
Volume:3828
Page Range:52-
Editors:
EditorsEmail
SPIE, UNSPECIFIED
Publisher:SPIE
Series Name:1
ISBN:0-8194-3314-4
Status:Published
Keywords:far-infrared, laser, semiconductor, silicon terahertz, impurity
Event Title:EUROPTO Conf. on Terahertz Spectroscopy and Applications II, München, Juni 1999
Organizer:SPIE
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EW - Erforschung des Weltraums
DLR - Research area:Space
DLR - Program:W EW - Erforschung des Weltraums
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 18:26

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