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Physical Properties of the Potential Barrier in Pt/n-GaAs Schottky Mixers

Hübers, H.-W. and Röser, H.P. (1998) Physical Properties of the Potential Barrier in Pt/n-GaAs Schottky Mixers. In: Proc. of the 9th Symp. on Space THz Technology, pp. 521-527. 9th Symp. on Space THz Technology, Pasadena, März 1998.

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Document Type:Conference or Workshop Item (Paper)
Additional Information: LIDO-Berichtsjahr=1999,
Title:Physical Properties of the Potential Barrier in Pt/n-GaAs Schottky Mixers
Authors:
AuthorsInstitution or Email of Authors
Hübers, H.-W.UNSPECIFIED
Röser, H.P.UNSPECIFIED
Date:1998
Journal or Publication Title:Proc. of the 9th Symp. on Space THz Technology
Page Range:pp. 521-527
Status:Published
Keywords:Schottky diode, potential barrier, fermi level, pinning, terahertz, mixer, metal-semiconductor contact, noise temperature, barrier inhomogeneities
Event Title:9th Symp. on Space THz Technology, Pasadena, März 1998
HGF - Research field:Aeronautics, Space and Transport (old)
HGF - Program:Space (old)
HGF - Program Themes:W EO - Erdbeobachtung
DLR - Research area:Space
DLR - Program:W EO - Erdbeobachtung
DLR - Research theme (Project):UNSPECIFIED
Location: Berlin-Adlershof
Institutes and Institutions:Institut für Weltraumsensorik und Planetenerkundung
Deposited By: elib DLR-Beauftragter
Deposited On:16 Sep 2005
Last Modified:14 Jan 2010 18:18

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