The morphology of silicon carbide in C/C-SiC composites
Schulte-Fischedick, J. and Zern, A. and Mayer, J. and Rühle, M. and Frieß, M. and Krenkel, W. and Kochendörfer, R. (2002) The morphology of silicon carbide in C/C-SiC composites. Journal of Materials Science and Engineering A, Elsevier Science, 332 (1-2), pp. 146-152.
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In the present investigations C/C-SiC has been studied by means of SEM, x-ray diffraction (XRD) and TEM to reveal the morphology of the silicon carbide areas. It was found that there exist two different areas of SiC, a fine grained beta layer with a high amount of stacking faults at the C-SiC interface, and a zone of coarser beta SiC at the SiC-Si interface. From these observations, reaction mechanisms governing the siliconization of porous C/C preforms are preposed. After an initial reaction of the carbon with silicon vapour, liquid silicon has to diffuse through the already formed SiC. A violent reaction far away from equilibrium conditions and a high number of nucleation sites leads to the observed formation of a fine grained SiC with a high density of stacking faults. Thermodynamically this is an instable configuration so that the coarser grained zone emerges by solution and precipitation.
|Title:||The morphology of silicon carbide in C/C-SiC composites|
|Journal or Publication Title:||Journal of Materials Science and Engineering A, Elsevier Science|
|In ISI Web of Science:||Yes|
|Page Range:||pp. 146-152|
|Keywords:||C/C-SiC, ceramic matrix composites, liquid silicon infiltration, SiC formation|
|HGF - Research field:||Aeronautics, Space and Transport|
|HGF - Program:||Space|
|HGF - Program Themes:||W RP - Raumtransport|
|DLR - Research area:||Space|
|DLR - Program:||W RP - Raumtransport|
|DLR - Research theme (Project):||UNSPECIFIED|
|Institutes and Institutions:||Institute of Structures and Design|
|Deposited By:||elib DLR-Beauftragter|
|Deposited On:||16 Sep 2005|
|Last Modified:||14 Jan 2010 22:30|
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